Point-Defect Studies in Platinum by Electron Irradiation at Low Temperatures. II. Resistivity Recovery from 10 to 300°K

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Abstract
Pairs of 99.999%-pure platinum wires were irradiated with equal doses below 10°K and annealed simultaneously. The recovery spectrum of both wires was closely identical. However, when one of the wires was quenched prior to the irradiation, the irradiation-damage recovery was remarkeably different from that of the unquenched wire: The ratio of the rate of recovery of the quenched to the unquenched wire was nearly 1 from 10 to 24°K, near 2 from 24 to 27°K, and near 0 from 28 to 32°K. The amount of recovery of the quenched sample was enhanced 7% over the unquenched sample. These results are strong evidence for long-range (uncorrelated) migration of an interstitial near 28°K. Only a few percent recovery takes place in either the quenched or the unquenched sample between 35 and 300°K. These observations, combined with other relevant experimental results and calculations based on chemical rate theory, provide evidence that the defects remaining above 35°K are mainly trapped interstitials, di-interstitials, and vacancies. Stage III is due to the release of trapped interstitials and the migration (or dissociation) of dimers. The vacancies migrate near 600°K (stage IV).