Photoemission investigation of the room-temperature adsorption of trimethylgallium on GaAs surface
- 20 February 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (8) , 698-699
- https://doi.org/10.1063/1.100866
Abstract
The adsorption of trimethylgallium (TMG) on GaAs (110) surface at room temperature was studied with ultraviolet photoemission spectroscopy by use of synchrotron radiation. The adsorption was found to saturate for TMG exposure as low as 3 langmuirs (L) resulting in a coverage of less than 0.1 monolayer. It is concluded that TMG molecules are adsorbed on the GaAs surface without decomposition.Keywords
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