MoSi2-gate MOSFET's for VLSI

• 1 January 1979
• proceedings article
• Published by Institute of Electrical and Electronics Engineers (IEEE)
• https://doi.org/10.1109/iedm.1979.189655

Abstract

Keywords

• ANNEALING
• PLASMA ETCHING
• RADIO FREQUENCY
• DIELECTRICS
• HYDROGEN
• THRESHOLD VOLTAGE
• ION IMPLANTATION
• SPUTTERING
• FABRICATION