MWIR lasers employing GaInSb/InAs broken-gap superlattice active regions and superlattice cladding layers
- 19 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2, 161-162
- https://doi.org/10.1109/leos.1995.484646
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Demonstration of 3.5 µm Ga 1-
x
In
x
Sb/InAssuperlattice diodelaserElectronics Letters, 1995