Photoelectron emission from aluminum and nickel measured in air
- 1 April 1975
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 46 (4) , 1553-1558
- https://doi.org/10.1063/1.321809
Abstract
Photoelectron emission from Al and Ni has been performed under atmospheric condtions. Measurements of photoemission current Ip as a function of oxide thickness yield attenuation lengths of 28 Å for Al2O3/Al and 71 Å for NiO/Ni for λ=2500 Å (∼5 eV). Photoemission from Al2O3/Al originates at the metal and is only attenuated by the oxide unless the oxide is bombarded with Ar+. After ion bombardment the oxide also emits electrons. Photoemission from NiO/Ni originates from the oxide for λ=2500 Å. Estimates of oxide film thickness can be made for very thin films (0∼200 Å) by very simple photoemission measurments in air.This publication has 3 references indexed in Scilit:
- Photoemission from Al–Al2O3 Films in the Vacuum Ultraviolet RegionJournal of Applied Physics, 1969
- Measurement of the thickness and refractive index of very thin films and the optical properties of surfaces by ellipsometryJournal of Research of the National Bureau of Standards Section A: Physics and Chemistry, 1963
- Electron Emission from Thin Al-Al2O3-Au StructuresJournal of Applied Physics, 1962