In situ and ex situ spectroscopic investigation of low temperature grown gallium arsenide by molecular beam epitaxy
- 1 May 1996
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 14 (3) , 2278-2281
- https://doi.org/10.1116/1.588919