Preparation of TiCxsingle crystal with homogeneous compositions
- 1 October 1979
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 47 (4) , 493-500
- https://doi.org/10.1016/0022-0248(79)90131-3
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Growth of Mg2TiO4 single crystals by the floating zone methodJournal of Materials Science, 1979
- Single crystal growth of YIG by the floating zone methodJournal of Crystal Growth, 1977
- The crystal growth of the transition metal compounds TiC, TiN, and ZrN by a floating zone techniqueJournal of Crystal Growth, 1976
- TiC single crystals prepared by the radio frequency floating zone processJournal of the Less Common Metals, 1973
- The preparation of crystalline refractory carbides by zone meltingJournal of Crystal Growth, 1972
- The crystal growth of transition metal interstitial compounds by a floating zone techniqueJournal of Crystal Growth, 1972
- A floating zone technique for the growth of carbide single crystalsJournal of Crystal Growth, 1968
- Scattering of Electrons by Vacancies in Nonstoichiometric Crystals of Titanium CarbidePhysical Review B, 1964
- Use of Induction Heating for Floating Zone Melting above 2000°CJournal of Applied Physics, 1963
- Growth of Yttrium Iron Garnet Single Crystals by the Floating Zone TechniqueJournal of Applied Physics, 1961