Gas source MEE (migration enhanced epitaxy) growth of InP
- 1 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4) , 502-506
- https://doi.org/10.1016/0022-0248(91)91028-9
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 6 references indexed in Scilit:
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- Systematic studies on the effect of growth interruptions for GaInAs/InP quantum wells grown by atmospheric pressure organometallic vapor-phase epitaxyJournal of Applied Physics, 1989
- Intrinsic strain at lattice-matched Ga0.47In0.53As/InP interfaces as studied with high-resolution x-ray diffractionApplied Physics Letters, 1988
- Migration-Enhanced Epitaxy of GaAs and AlGaAsJapanese Journal of Applied Physics, 1988
- Relationship between the conduction-band discontinuities and band-gap differences of InGaAsP/InP heterojunctionsApplied Physics Letters, 1984
- Molecular Beam Epitaxy of GaAs and InP with Gas Sources for As and PJournal of the Electrochemical Society, 1980