Low threshold 1.3 μm strained-layer Al/sub x/Ga/sub y/ln/sub 1-x-y/As Quantum Well Lasers

Publisher Website

25 August 2005

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 202-203
https://doi.org/10.1109/islc.1992.763637

Abstract

No abstract available

Keywords

This publication has 3 references indexed in Scilit:

Very low threshold current density 1.5 μm GaInAs/AlGaInAs graded-index separate-confinement-heterostructure strained quantum well laser diodes grown by organometallic chemical vapor deposition
Applied Physics Letters, 1991
Low threshold 1.5 μm tensile-strained single quantum well lasers
Electronics Letters, 1991
AlInGaAs/AlGaAs separate-confinement heterostructure strained single quantum well diode lasers grown by organometallic vapor phase epitaxy
Applied Physics Letters, 1991