Recent Developments in High Resistivity Detector-Grade CdTe
- 1 January 1994
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
We present a brief review of results concerning the doping or compensation of CdTe by different elements like halogen, group IV, hydrogen and 3d transition elements for high resistivity materials. Comparison with theoretical models and discussion of results under this light is provided.Keywords
This publication has 27 references indexed in Scilit:
- Structural properties of defects in Cd1−xZnxTeMaterials Science and Engineering: B, 1993
- Native defect equilibrium in semi-insulating CdTe(Cl)Materials Science and Engineering: B, 1993
- A 90 element CdTe array detectorNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1992
- Characterization of deep levels in CdTe by photo-EPR and related techniquesJournal of Crystal Growth, 1990
- Deep donor levels due to isolated Fe in CdTeJournal of Crystal Growth, 1985
- Electron Paramagnetic Resonance Investigation of Pb‐ and Ge‐doped CdTePhysica Status Solidi (b), 1984
- Cadmium Telluride Nuclear Radiation DetectorsIEEE Transactions on Nuclear Science, 1975
- Characterization of the Transport Properties of Halogen-Doped CdTe Used for Gamma-Ray DetectorsIEEE Transactions on Nuclear Science, 1974
- Electrically active point defects in cadmium tellurideMetallurgical Transactions, 1970
- The effect of doubly ionizable vacancy acceptors on the conductivity of donor doped semiconducting compounds with special reference to CdTe and ZnTeJournal of Physics and Chemistry of Solids, 1965