15.6 GHz HBT microstrip oscillator
- 18 February 1988
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 24 (4) , 230-232
- https://doi.org/10.1049/el:19880154
Abstract
This letter describes the design and performance of the first reported Ku-band HBT oscillator. The circuit was implemented in microstrip on an alumina substrate. The device used was a fully self-aligned AlGaAs/GaAs HBT using side wall technology. An output power of +6.5 dBm was achieved at 15.6 GHz with a collector efficiency of 11%. The phase noise was −60 dBc/Hz at 10 kHz offset, which is comparable to that of a silicon bipolar oscillator, and 20 dB less than that for a GaAs FET oscillator at the same frequency band.Keywords
This publication has 1 reference indexed in Scilit:
- Dielectric Resonator Oscillators Using GaAs/(Ga,A1)As Heterojunction Bipolar TransistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005