Long lifetimes of excitons in stressed Ge
- 1 January 1981
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 37 (4) , 319-324
- https://doi.org/10.1016/0038-1098(81)90368-9
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Recombination of donor bound-excitons in germaniumPhysical Review B, 1979
- Experimental Determination of the Density Dependence of Electron-Hole Correlation in Electron-Hole LiquidPhysical Review Letters, 1978
- Properties of the strain-confined electron-hole liquid in GePhysical Review B, 1978
- Strain-confined electron-hole liquid in germaniumPhysical Review B, 1977
- Magnetic-field dependent intensity oscillations of the EHD luminescence in pure germaniumSolid State Communications, 1975
- Mass Reversal Effect in the Split Indirect Exciton of GePhysical Review Letters, 1975
- Decay Kinetics of Electron-Hole-Drop and Free-Exciton Luminescence in Ge: Evidence for Large Drops.Physical Review Letters, 1974
- Decay Kinetics of Electron-Hole-Drop and Free-Exciton Luminescence in Ge: Evidence for Large DropsPhysical Review Letters, 1974
- Condensation of Free Excitons into Electron-Hole Drops in Pure GermaniumPhysical Review B, 1972
- Influence of Uniaxial Stress on the Indirect Absorption Edge in Silicon and GermaniumPhysical Review B, 1966