The two carriers’ mobility-lifetime products and their light intensity dependencies in hydrogenated amorphous silicon
- 15 January 1994
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 75 (2) , 914-923
- https://doi.org/10.1063/1.356447
Abstract
No abstract availableThis publication has 23 references indexed in Scilit:
- The Photocarrier Grating and Its Applications in the Study of A-Si:H Materials and DevicesMRS Proceedings, 1992
- Theory of the small photocarrier grating under the application of an electric fieldPhysical Review B, 1991
- Potential fluctuations due to inhomogeneity in hydrogenated amorphous silicon and the resulting charged dangling-bond defectsPhysical Review B, 1990
- Defect Thermodynamics, Inhomogeneity, and the Density of Gap States in Hydrogenated Amorphous SiliconMRS Proceedings, 1990
- Density of states and temperature dependence of the exponent in the light-intensity behavior ofa-Si:H photoconductivityPhysical Review B, 1989
- Dangling bonds in doped amorphous silicon: Equilibrium, relaxation, and transition energiesPhysical Review B, 1989
- Recombination at dangling bonds and steady-state photoconductivity ina-Si:HPhysical Review B, 1986
- Photoconductivity and recombination in amorphous silicon alloysPhysical Review B, 1984
- Fermi-level effects in-Si:H photoconductivityPhysical Review B, 1983
- Electronic Structure of Amorphous SemiconductorsPhysical Review Letters, 1976