Oscillatory multilayer relaxation and stacking fault in the Si(111)7×7 surface

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Abstract
A comparison between the constant-momentum-transfer—averaged low-energy electron-diffraction intensity spectra of the Si(111)7×7 surface collected by Bennett and the kinematic calculations of the present work shows that in the surface there is a deep-extended oscillatory multilayer relaxation which causes the layer spacings to be 0.69, 2.40, 0.69, 2.42, 0.64, 2.49,...,0.64, and 2.49 Å, in contrast to their corresponding bulk values of 0.78 and 2.35 Å, and that the stacking sequence of atom layers of the surface is indeed faulted.