High power InGaAs/GaAs laser array
- 11 October 1990
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 26 (21) , 1816-1817
- https://doi.org/10.1049/el:19901162
Abstract
The fabrication and performance characteristics of In0.2Ga0.8As/GaAs gain guided laser arrays emitting near 1 μm are reported. The multiquantum well active region has three wells and is grown by molecular beam epitaxy. The 1 mm long lasers have a broad area threshold current density of 90 A/cm2. The estimated transparency current density per well from the measured threshold current density against cavity length data is 22 A/cm2. The ten-stripe coupled laser arrays have been operated to pulsed output powers of 4 W and CW output power of 1 W.Keywords
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