Irradiation effects on passivated NMOS-transistors caused by electron beam testing
- 1 October 1983
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 1 (2) , 93-102
- https://doi.org/10.1016/0167-9317(83)90023-0
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Function testing of bipolar ICs and LSIs with the stroboscopic scanning electron microscopeIEEE Journal of Solid-State Circuits, 1980
- The effect of passivation on the observation of voltage contrast in the scanning electron microscopeJournal of Physics D: Applied Physics, 1978
- A Simple Model for Predicting Radiation Effects in MOS DevicesIEEE Transactions on Nuclear Science, 1978
- Determination of Kilovolt Electron Energy Dissipation vs Penetration Distance in Solid MaterialsJournal of Applied Physics, 1971