Studies of defect structure effects on the transport properties of pure crystalline n-CdS VIA the temperature dependence of photoacoustic and photocurrent spectra
- 1 January 1986
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 47 (12) , 1115-1128
- https://doi.org/10.1016/0022-3697(86)90143-5
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Observation of Surface Roughness by PAS using Transparent Transducer and Photothermal Deflection Sepectroscopy (PDS)Japanese Journal of Applied Physics, 1985
- Photoacoustic spectra of CdS detected from the unilluminated surfaceJournal of Applied Physics, 1984
- Laser oscillations in the bound-excitonic region of CdSJournal of Applied Physics, 1984
- Photoacoustic Measurement of Non-radiative States and Defects in CdS and Si with ZnO TransducerJapanese Journal of Applied Physics, 1980
- Tunable laser-emission from Wurtzite-type II–VI compoundsOptics Communications, 1980
- Wide-band II-VI semiconductors and the prospects of their applicationSoviet Physics Uspekhi, 1974
- Photoconductivity of Pure Cadmium Sulfide Single Crystal near the Band EdgeJournal of the Physics Society Japan, 1967
- Fundamental Absorption Edge in Cadmium SulfidePhysical Review B, 1958
- Mechanism for Photovoltaic and Photoconductivity Effects in Activated CdS CrystalsPhysical Review B, 1954
- Luminescence and Photoconductivity in Cadmium Sulfide at the Absorption EdgePhysical Review B, 1953