Point defect characterization of GaN and ZnO

This publication has 10 references indexed in Scilit:

• Electrical properties of bulk ZnO
  Solid State Communications, 1998
• High Al-content AlGaN/GaN MODFETs for ultrahigh performance
  IEEE Electron Device Letters, 1998
• Electron-irradiation-induced deep level in n-type GaN
  Applied Physics Letters, 1998
• InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
  Applied Physics Letters, 1998
• High power applications for GaN-based devices
  Solid-State Electronics, 1997
• Defect Donor and Acceptor in GaN
  Physical Review Letters, 1997
• Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurements
  Applied Physics Letters, 1997
• Optical detection of magnetic resonance in electron-irradiated GaN
  Physical Review B, 1997
• Similarities in the bandedge and deep-centre photoluminescence mechanisms of ZnO and GaN
  Solid State Communications, 1997
• The Role of Impurities in Hydride Vapor Phase Epitaxially Grown Gallium Nitride
  MRS Proceedings, 1995