Effects of pre- and post-annealing treatments on silicon Schottky barrier diodes

1 March 1970

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 58 (3) , 492-494
https://doi.org/10.1109/PROC.1970.7669

Abstract

Experimental results obtained on metal-silicon Schottky barriers are presented. The investigation concerns the effect of preconditioning the silicon surface prior to metal evaporation, and also the change in barrier height with a post-evaporation heat treatment. The values for a particular metal indicate that the preannealing results in a barrier height closer to that predicted by the Schottky model. Heat treating of the formed diode shows the barrier height approaching the limiting value obtained on cleaved silicon surfaces.

Keywords

SILICON
SCHOTTKY BARRIERS
SCHOTTKY DIODES
SEMICONDUCTOR DIODES
SURFACE TREATMENT
POLES AND ZEROS
TRANSFER FUNCTIONS
APPLICATION SPECIFIC INTEGRATED CIRCUITS
ELECTRONS
CHEMICALS