Interdiffused quantum-well infrared photodetectors for color sensitive arrays

Proton implantation and rapid thermal annealing were used to tune the infrared spectral response of quantum-well infrared photodetectors (QWIP) by up to 1.4 μm. Multiple proton implants at energies between 200 and 420 keV were used to create homogeneous quantum-well intermixing throughout the device’s multiple-quantum-well structure. Photoluminescence and spectral response measurements were used to study the effect of proton implantation on QWIPs for a series of doses up to ${\text{3.5×10}}^{15} {\mathrm{protons cm}}^{\mathrm{-2}}.$ By using a mask during implantation, a method of constructing a color sensitive array is proposed.