Fast and Efficient Photon-Gated Burning of Persistent Spectral Holes in Donor-Acceptor Electron Transfer Systems

Abstract
Extremely fast and highly efficient burning of persistent spectral holes was observed for metal-free tetraphenylporphine with halogenated anthracene derivatives in poly(methylmethacrylate) or poly(ethylene) film. Persistent spectral holes were burnt when the system was irradiated with two 2.5 ns pulses [energy: 0.6 mJ/(cm2·pulse)], or with two 1 or10 µs pulses [energy: 60 pJ/(cm2·pulse)] at about 645 nm. The hole formation yield is independent of the time interval between frequency-selective and gating excitation up to as long as 2 min, suggesting the participation of a stable intermediate state in the reaction.