Full integration and reliability evaluation of phase-change RAM based on 0.24 μm-CMOS technologies

2 March 2004

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 173-174
https://doi.org/10.1109/vlsit.2003.1221141

Abstract

We have fully integrated a nonvolatile random access memory by successfully incorporating a reversibly phase-changeable chalcogenide memory element with MOS transistor. As well as basic characteristics of the memory operation, we have also observed reliable performances of the device on hot temperature operation, endurance against repetitive phase transition, writing imprint, reading disturbance and data retention.

Keywords

CMOS TECHNOLOGY
PHASE CHANGE RANDOM ACCESS MEMORY
NONVOLATILE MEMORY
RANDOM ACCESS MEMORY
WRITING
CRYSTALLIZATION
AMORPHOUS MATERIALS
PLASMA CONFINEMENT
PHASE CHANGE MEMORY
MOSFETS

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