High-performance MOCVD-grown AlGaAs/GaAs heterojunction bipolar transistors with carbon-doped base
- 1 June 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 12 (6) , 347-349
- https://doi.org/10.1109/55.82083
Abstract
Excellent microwave performance is demonstrated by metalorganic chemical vapor deposition (MOCVD) grown AlGaAs/GaAs heterojunction bipolar transistors (HBTs) with carbon-doped base. These devices achieve a current-gain cutoff frequency of 76 GHz and a maximum frequency of oscillation of 102 GHz. Varying the device structures allows the current gain to reach over 300 in structures with a base doping of 2*10/sup 19 /cm/sup -3/. A static divide-by-four divider implemented with C-doped base HBTs has been operated up to a frequency of 20.4 GHz. These results indicate the suitability of carbon doping for high-performance HBTs.Keywords
This publication has 8 references indexed in Scilit:
- 25 GHz HBT frequency dividersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Carbon doping of III–V compounds grown by MOMBEJournal of Crystal Growth, 1990
- Carbon-doped base GaAs-AlGaAs HBT's grown by MOMBE and MOCVD regrowthIEEE Electron Device Letters, 1990
- Carbon-doped base GaAs/AlGaAs heterojunction bipolar transistor grown by metalorganic chemical vapor deposition using carbon tetrachloride as a dopant sourceApplied Physics Letters, 1990
- Carbon doping in molecular beam epitaxy of GaAs from a heated graphite filamentApplied Physics Letters, 1988
- Atomic layer epitaxy grown heterojunction bipolar transistor having a carbon-doped baseIEEE Transactions on Electron Devices, 1988
- Characterization of p-type GaAs heavily doped with carbon grown by metalorganic molecular-beam epitaxyJournal of Applied Physics, 1988
- AlGaAs/GaAs heterojunction bipolar transistor circuits with improved high-speed performanceElectronics Letters, 1986