Light emitting charge injection transistor with p-type collector

11 May 1992

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 60 (19) , 2415-2417
https://doi.org/10.1063/1.106990

Abstract

We report the first realization of a charge injection transistor with a complementary collector. The device is implemented using InGaAs/InAlAs/InGaAs heterostructure material grown by molecular beam epitaxy. Real space transfer of hot electrons into the p‐type collector leads to a luminescence signal arising from the recombination of the injected electrons with holes in the collector active region. The observed on/off ratio in the emitted light power is more than 10⁴ and obeys an exclusive OR function of input voltages. The estimated internal quantum efficiency is as high as 90%.

Keywords

This publication has 4 references indexed in Scilit:

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