Molecular beam epitaxial GaAs/AlGaAs heterojunction bipolar transistors on
- 1 January 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 13 (1) , 29-31
- https://doi.org/10.1109/55.144941
Abstract
The authors have investigated the characteristics and reproducibility of Si-doped p-typeKeywords
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