1/f Tunnel Current Noise through Si-bound Alkyl Monolayers

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  • 19 January 2007
Abstract
We report on the low frequency tunnel current noise characteristics of an organic monolayer tunnel junction. The measured devices, n-Si/alkyl chain (C18H37)/Al junctions, exhibit a clear 1/f γ power spectrum noise with 1< γ 0.4 V, with an amplitude varying from device to device. We attribute this effect to an energy-dependent trap-induced tunnel current. We find that the background noise SI scales with and a model is proposed which is consistent with our experimental data.

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