The Gain and Noise Performance of Lossy Distributed Amplifiers using MESFETs

1 October 1984

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 398-403
https://doi.org/10.1109/euma.1984.333444

Abstract

Theoretical gain and noise behaviour of the general case lossy distributed amplifier are presented. The effects of the number of MESFETs used and critical MESFET parameters are highlighted.

Keywords

PERFORMANCE GAIN
PERFORMANCE LOSS
DISTRIBUTED AMPLIFIERS
MESFETS
FREQUENCY
ATTENUATION
EQUIVALENT CIRCUITS
CIRCUIT NOISE
MATHEMATICS
DISTRIBUTED COMPUTING

This publication has 3 references indexed in Scilit:

On Noise in Distributed Amplifiers at Microwave Frequencies
IEEE Transactions on Microwave Theory and Techniques, 1983
Gate noise in field effect transistors at moderately high frequencies
Proceedings of the IEEE, 1963
Thermal Noise in Field-Effect Transistors
Proceedings of the IRE, 1962