Si/SiO2 Interface Studies by Immersion Ellipsometry
- 24 October 1993
- journal article
- Published by Springer Nature in MRS Proceedings
- Vol. 315 (1) , 405-410
- https://doi.org/10.1557/proc-315-405
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- An Interface Enhanced Spectroscopic Ellipsometry Technique: Application to Si ‐ SiO2Journal of the Electrochemical Society, 1992
- Ex Situ and In Situ Ellipsometric Studies of the Thermal Oxide on InPJournal of the Electrochemical Society, 1991
- Models for the oxidation of siliconCritical Reviews in Solid State and Materials Sciences, 1988
- Defect Microchemistry at the Si/Si InterfacePhysical Review Letters, 1987
- Silicon oxidation and Si–SiO2 interface of thin oxidesJournal of Materials Research, 1987
- High-resolution electron microscopy of structural features at the SiSiO2 interfaceMaterials Letters, 1987
- Optical properties of thin filmsThin Solid Films, 1982
- Spectroscopic Analysis of the Interface Between Si and Its Thermally Grown OxideJournal of the Electrochemical Society, 1980
- Optical Evidence for a Silicon‐Silicon Oxide InterlayerJournal of the Electrochemical Society, 1979
- General Relationship for the Thermal Oxidation of SiliconJournal of Applied Physics, 1965