Surface state band on GaAs (110) face
- 1 November 1974
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 25 (9) , 511-514
- https://doi.org/10.1063/1.1655570
Abstract
Careful photoemission studies of surface states on the cleavage GaAs (110) detect no filled states in the band gap. However, empty states pin the surface Fermi level on n -type GaAs at midband gap. Filled states are placed below the valence-band maximum and empty surface states in the upper half of the band gap. Calculations, using the bond orbital model, agree with these results and associate the empty and filled bands with Ga and As, respectively.Keywords
This publication has 14 references indexed in Scilit:
- Surface and Bulk Contributions to Ultraviolet Photoemission Spectra of SiliconPhysical Review Letters, 1974
- Photoemission study of the effect of bulk doping and oxygen exposure on silicon surface statesPhysical Review B, 1974
- Bond-Orbital Model and the Properties of Tetrahedrally Coordinated SolidsPhysical Review B, 1973
- Surface States and Surface Bonds of Si(111)Physical Review Letters, 1973
- Observation of a Band of Silicon Surface States Containing One Electron Per Surface AtomPhysical Review Letters, 1972
- Photoemission Densities of Intrinsic Surface States for Si, Ge, and GaAsPhysical Review Letters, 1972
- Relationship of Surface-State Band Structure to Surface Atomic Configuration of Zinc Blende (110)Physical Review B, 1970
- Intrinsic Surface States in SemiconductorsPhysical Review Letters, 1968
- Metal-semiconductor surface barriersSolid-State Electronics, 1966
- Study of the Surface States of Diamond and Graphite by a Simple MO-LCAO MethodPhysical Review B, 1960