Optical gating performance using a semiconductor-doped glass etalon
- 1 April 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 2 (4) , 268-270
- https://doi.org/10.1109/68.53258
Abstract
Optical gating is demonstrated using fast-response CdSeTe-doped glass. Continuous-wave probe light and pulsed gate light collinearly illuminate a Fabry-Perot nonlinear optical cavity consisting of two external mirrors and the doped glass. The output of the probe light is gated by the gate light with fast response time. The gating is caused by refractive-index change in the glass due to the carriers generated by the gate light. The nonlinear refractive index of the material is evaluated precisely.Keywords
This publication has 6 references indexed in Scilit:
- Picosecond switching induced by saturable absorption in a nonlinear directional couplerApplied Physics Letters, 1988
- Laser annealing effect on carrier recombination time in CdSXSe_1–X-doped glassesJournal of the Optical Society of America B, 1988
- Excitonic optical nonlinearity and exciton dynamics in semiconductor quantum dotsPhysical Review B, 1987
- Observation of optical bistability in CdSXSe_1−X-doped glasses with 25-psec switching timeOptics Letters, 1987
- Interferometric measurement of the nonlinear index of refraction, n2, of CdSxSe1−x-doped glassesApplied Physics Letters, 1986
- Degenerate four-wave mixing in semiconductor-doped glassesJournal of the Optical Society of America, 1983