MeV Si implantation in GaAs
- 1 January 1985
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 6 (1-2) , 287-291
- https://doi.org/10.1016/0168-583x(85)90647-0
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
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- Applications of Electrochemical Methods for Semiconductor Characterization: I . Highly Reproducible Carrier Concentration Profiling of VPE “Hi‐Lo”Journal of the Electrochemical Society, 1980
- An automatic carrier concentration profile plotter using an electrochemical techniqueJournal of Applied Electrochemistry, 1975
- Localized Vibrational Mode Absorption of Ion-Implanted Silicon in GaAsJournal of Applied Physics, 1972