Bistable Switching in Metal-Semiconductor Junctions
- 1 April 1972
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 20 (7) , 244-245
- https://doi.org/10.1063/1.1654130
Abstract
Bistable switching with memory has been achieved in various n‐type GaAs Schottky contacts and n‐type Si Schottky contacts doped with trap impurities. Transition from the low‐conductivity state into a high‐conductivity state is established after a delay of 10 nsec, when a threshold voltage is exceeded. With opposite bias direction, resetting occurs in 10 nsec by exceeding a current threshold. Either state is maintained over weeks without bias.Keywords
This publication has 3 references indexed in Scilit:
- SWITCHING AND MEMORY IN ZnSe–Ge HETEROJUNCTIONSApplied Physics Letters, 1970
- Reversible Electrical Switching Phenomena in Disordered StructuresPhysical Review Letters, 1968
- Switching properties of thin Nio filmsSolid-State Electronics, 1964