Characterisation of MeV neon damage in silicon
- 1 April 1986
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 15 (1-6) , 439-442
- https://doi.org/10.1016/0168-583x(86)90340-x
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Ion-induced defects in semiconductorsNuclear Instruments and Methods, 1981
- A Monte Carlo computer program for the transport of energetic ions in amorphous targetsNuclear Instruments and Methods, 1980
- The Nature And Origin Of {113} Faults In Irradiated Silicon And GermaniumJournal of Microscopy, 1980
- Stopping power of energetic helium ions transmitted through thin silicon crystals in channelling and random directionsRadiation Effects, 1972