Effects of C/Si Ratio in Chemical Vapor Deposition of 4H-SiC(11\bar20) and (03\bar38)
- 10 December 2003
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 42 (Part 1, No) , 7294-7295
- https://doi.org/10.1143/jjap.42.7294
Abstract
Homoepitaxial growth of 4H-SiC(1120) and (0338) by hot-wall chemical vapor deposition has been investigated. Both the residual-donor concentration and deep-level concentrations can be reduced by increasing the C/Si ratio during growth. The optimum C/Si ratio for obtaining high-quality epilayers with good morphology is higher on the non-basal planes than on off-axis (0001). The correlation between deep levels and growth condition is discussed.Keywords
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