Influence of reflectivity on femtosecond transmission spectroscopy of thin GaAs films
- 1 July 1994
- journal article
- Published by Elsevier in Optics Communications
- Vol. 109 (3-4) , 258-264
- https://doi.org/10.1016/0030-4018(94)90690-4
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Spectral-hole burning and carrier thermalization in GaAs at room temperaturePhysical Review B, 1993
- Absorption edge singularities in highly excited semiconductorsPhysical Review Letters, 1992
- Chirp measurement of large-bandwidth femtosecond optical pulses using two-photon absorptionOptics Communications, 1991
- Subpicosecond kinetics of band-edge absorption inAsPhysical Review B, 1991
- Transient oscillations and dynamic Stark effect in semiconductorsPhysical Review B, 1988
- Picosecond band filling in highly excited In-Ga-As-P filmsPhysical Review B, 1986
- Room-Temperature Optical Nonlinearities in GaAsPhysical Review Letters, 1986
- Influence of interference on photoinduced changes in transmission and reflectionOptics Communications, 1986
- Femtosecond Excitation of Nonthermal Carrier Populations in GaAs Quantum WellsPhysical Review Letters, 1986
- Subpicosecond Spectral Hole Burning Due to Nonthermalized Photoexcited Carriers in GaAsPhysical Review Letters, 1985