Lattice location of lead implanted into silicon at room temperature
- 1 August 1977
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 13 (4) , 391-393
- https://doi.org/10.1007/bf00882616
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Non-crystallinity of ion-irradiated metalsNature, 1976
- Polyatomic-Ion Implantation Damage in SiliconPhysical Review Letters, 1975
- The energy dependence and depth distribution of lattice disorder in ion-implanted siliconRadiation Effects, 1970
- Substitutional doping during low-dose implantation of Bi and Ti ions in Si at 25°CRadiation Effects, 1969