Millimeter-wave GaAs Schottky-barrier IMPATT diodes

1 January 1972

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 60 (11) , 1448-1449
https://doi.org/10.1109/PROC.1972.8925

Abstract

GaAs Schottky-barrier IMPATT diodes have been made by using liquid-phase GaAs epitaxial wafers. On the diodes, with the heat sink made by copper plating, a maximum power of 725 mW was obtained at 27.48 GHz, and a maximum efficiency of 11.9 percent was obtained at 29.70 GHz.

Keywords

GALLIUM ARSENIDE
SCHOTTKY DIODES
BLADES
DIFFRACTION
EPITAXIAL LAYERS
FACE DETECTION
HEAT SINKS
MILLIMETER WAVE TECHNOLOGY
SUBSTRATES
THERMAL RESISTANCE

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