Scaling of GaAs/AlGaAs laser diodes for submilliampere threshold current

6 July 1989

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 25 (14) , 892-893
https://doi.org/10.1049/el:19890598

Abstract

GaAs/AlGaAs lasers grown by a single-step MBE on grooved substrates have been used to investigate the scaling of lasers for very low threshold current. By tuning the facet reflectivity and the laser length, to keep the photon lifetime constant, it has been possible to scale down the threshold current to 0.65 mA without changing the external efficiency.

Keywords

SCALING OF LASERS
OPTICAL INTERCONNECT
GAAS-ALGAAS LASER DIODES
LASER LENGTH
LOW THRESHOLD CURRENT
EXTERNAL EFFICIENCY
GROOVED SUBSTRATES
SEMICONDUCTORS
FACET REFLECTIVITY
PHOTON LIFETIME
SUBMILLIAMPERE THRESHOLD CURRENT
SINGLE-STEP MBE
0.65 MA

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