Gold catalyzed growth of silicon nanowires by plasma enhanced chemical vapor deposition
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- 1 November 2003
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 94 (9) , 6005-6012
- https://doi.org/10.1063/1.1614432
Abstract
Silicon nanowires were selectively grown at temperatures below 400 °C by plasma enhanced chemical vapor deposition using silane as the Si source and gold as the catalyst. A detailed growth study is presented using electron microscopy, focused ion beam preparation, and Raman spectroscopy. A radio-frequency plasma significantly increased the growth rate. The Si nanowires show an uncontaminated, crystalline silicon core surrounded by a 2-nm-thick oxide sheath. The as-grown diameters are small enough for the observation of quantum confinement effects. Plasma activation could allow a further decrease in deposition temperature. A growth model for plasma enhanced nanowire growth is discussed.Keywords
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