A Resistive HEMT-Mixer with Very Low LO-Power Requirements and Low Intermodulation

1 September 1991

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

Vol. 2, 1469-1474
https://doi.org/10.1109/euma.1991.336552

Abstract

The channel resistance of a High Electron Mobility Transistor (HEMT) is used as a time variable resistor to accomplish frequency mixing. An X-band image rejected mixer was constructed and pseudomorphic HEMTs were fabricated in order to investigate the performance. Acceptable conversion is obtained at very low LO-power. The experimental -1 dB compression point referred to the output is found to be approximately 3 dB lower than the LO-power.

Keywords

HEMTS
RADIO FREQUENCY
CIRCUIT SIMULATION
SEMICONDUCTOR DEVICE MODELING
DIODES
RESISTORS
MIXERS
LOW VOLTAGE
MOLECULAR BEAM EPITAXIAL GROWTH
OHMIC CONTACTS

This publication has 2 references indexed in Scilit:

Zero bias GaInAs MISFET mixers
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
A GaAs MESFET Mixer with Very Low Intermodulation
IEEE Transactions on Microwave Theory and Techniques, 1987