Feasibility Study Of Charge Transfer Devices In HgCdTe/CdTe Heterostructures

7 May 1980

proceedings article
Published by SPIE-Intl Soc Optical Eng

Vol. 0217, 100-103
https://doi.org/10.1117/12.958481

Abstract

Advances in epitaxial hgCdTe/CdTe material technology such as high crystalline quality and surface morphology have motivated the study of MIS devices and the current development of CCDs in these heterostructures. Results of MIS device studies in n-and p-type HgCdTe/CdTe structures are presented. Annealing in Hg atmosphere was used to obtain n 10¹⁴ cm^-3 and p 5 x 10¹⁵ cm³. A native oxide passivation used in conjunction with ZnS has yielded high-integrity MIS interfaces for n-type epilayers. For p-type HgCdTe/CdTe, n⁺/p junction technology and ZnS passivation have been used to demonstrate enhancement-mode MISFETs. These results indicate the feasibility of MISCCDs in HgCdTe/CdTe structures, with particularly attractive features in n-channel (p-type) devices.

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