Theoretical Investigation Of Extended Defects In Group-III Nitrides
- 1 January 1997
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Domain boundaries in epitaxial wurtzite GaNApplied Physics Letters, 1997
- Defect structure of metal-organic chemical vapor deposition-grown epitaxial (0001) GaN/Al2O3Journal of Applied Physics, 1996
- Structural characterization of bulk GaN crystals grown under high hydrostatic pressureJournal of Electronic Materials, 1996
- Nucleation layer evolution in metal-organic chemical vapor deposition grown GaNApplied Physics Letters, 1996
- High dislocation densities in high efficiency GaN-based light-emitting diodesApplied Physics Letters, 1995
- Atomic geometry and electronic structure of native defects in GaNPhysical Review B, 1994
- High-Resolution Electron Microscopy of Extended Defects in Wurtzite CrystalsJapanese Journal of Applied Physics, 1994
- Ab initiomolecular dynamics for liquid metalsPhysical Review B, 1993
- Native defects and self-compensation in ZnSePhysical Review B, 1992
- Structural Defects in GaN Epilayers Grown by Gas Source Molecular Beam EpitaxyMRS Proceedings, 1989