Electromigration-Induced Short Circuit Failure
- 1 March 1985
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE) in 8th Reliability Physics Symposium
- No. 07350791,p. 81-86
- https://doi.org/10.1109/irps.1985.362080
Abstract
A study was made of electromigration-induced short circult failure in multilevel metal structures. The material chosen for this study was Al deposited on a layer of TiW, a metallization prone to the formation of whiskers during current stress. The dominant failure mode was found to be interlayer metal shorts. Experiments were performed to examine the relationship between short circuit lifetime and temperature, current density, and interlayer dielectric thickness.Keywords
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