Precipitation of oxygen in dislocation-free silicon
- 16 November 1979
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 56 (1) , 213-223
- https://doi.org/10.1002/pssa.2210560123
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- The structure of rod defects in boron-implanted siliconPhilosophical Magazine A, 1978
- Vibrational normal modes of SiO2. II. Cristobalite and tridymiteThe Journal of Chemical Physics, 1978
- Oxygen precipitation and the generation of dislocations in siliconPhilosophical Magazine, 1976
- Characterization of structural defects in annealed silicon containing oxygenJournal of Applied Physics, 1976
- Vibrational normal modes of SiO2. I. α and β quartzThe Journal of Chemical Physics, 1974
- Analysis of evaporated silicon oxide films by means of (d, p) nuclear reactions and infrared spectrophotometryPhysica Status Solidi (a), 1971
- The solubility of carbon in pulled silicon crystalsJournal of Physics and Chemistry of Solids, 1971
- Vibrational absorption of carbon in siliconJournal of Physics and Chemistry of Solids, 1965
- The solubility of oxygen in siliconJournal of Physics and Chemistry of Solids, 1959
- Oxygen Content of Silicon Single CrystalsJournal of Applied Physics, 1957