The tailoring of impact ionization phenomenon using pseudomorphic structures-applications to InGaAlAs on GaAs and InP substrates
- 1 March 1992
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 7 (3B) , B509-B511
- https://doi.org/10.1088/0268-1242/7/3b/133
Abstract
The potential of utilizing strain for suppressing impact ionization is evaluated. It is found that if compressive strain is introduced without altering the bandgap (e.g. by using properly tailored InGaAlAs alloys) the threshold energy for electron impact ionization is significantly increased for both GaAs-based and InP-based materials.Keywords
This publication has 7 references indexed in Scilit:
- In-plane hole effective masses in InxGa1−xAs/Al0.15Ga0.85As modulation-doped heterostructuresApplied Physics Letters, 1989
- Band structure and charge control studies of n- and p-type pseudomorphic modulation-doped field-effect transistorsJournal of Applied Physics, 1989
- Theoretical investigation of hole transport in strained III-V semiconductors: Application to GaAsApplied Physics Letters, 1988
- GaAs/(In,Ga)As, p-channel, multiple strained quantum well field-effect transistors with high transconductance and high peak saturated drain currentApplied Physics Letters, 1988
- High-transconductance p-channel InGaAs/AlGaAs modulation-doped field effect transistorsIEEE Electron Device Letters, 1987
- p-channel, strained quantum well, field-effect transistorApplied Physics Letters, 1986
- Valence-Band Parameters in Cubic SemiconductorsPhysical Review B, 1971