Preparation of W and Mo thin films by r.f.-d.c. coupled magnetron sputtering
- 15 April 1993
- journal article
- Published by Elsevier in Materials Science and Engineering: A
- Vol. 163 (2) , 163-165
- https://doi.org/10.1016/0921-5093(93)90782-a
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Stresses, microstructure and resistivity of thin tungsten films deposited by RF magnetron sputteringApplied Surface Science, 1989
- The effects of oxygen concentration in sputter-deposited molybdenum filmsThin Solid Films, 1988
- Very-Low-Temperature Epitaxial Silicon Growth By Low-Kinetic-Energy Particle BombardmentJapanese Journal of Applied Physics, 1988
- Physicochemical properties in tungsten films deposited by radio‐frequency magnetron sputteringJournal of Vacuum Science & Technology A, 1988
- Inelastic scattering of electrons traversing semiconductor heterojunctionsApplied Physics Letters, 1988
- Effects of substrate bias on the resistivity and microstructure of molybdenum and molybdenum silicide filmsThin Solid Films, 1987
- Transport in refractory metals and their interaction with SiO2: Comparison of tungsten and molybdenumThin Solid Films, 1987
- A new tungsten gate process for VLSI applicationsIEEE Transactions on Electron Devices, 1984
- Refractory metal gate processes for VLSI applicationsIEEE Transactions on Electron Devices, 1979