Recent advances in thin-film silicon devices on sapphire substrates

1 January 1971

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 59 (10) , 1506-1510
https://doi.org/10.1109/PROC.1971.8462

Abstract

The growth of silicon films on insulating substrates, their fabrication into active devices, and the advantages of such devices, especially for fast memory applications, were previously reported. Recent advances in these devices are described, including techniques of material growth and characterization, fabrication procedures, and device results. Thin-film resistors and capacitors operating at UHF have been prepared. With improvements in the material and device processing, bipolar transistors with current gains of 20-40 and useful operation between 500 and 1000 MHz were fabricated. MOS triodes and tetrodes which operate at the same frequency range and silicon-gate MOSFETs (SIGFETs), with voltage gains between 50-150 having negligible feedback capacitances (less than 0.02 pF/electrode), have been made. Thresholds of 1.5 and 2.5 V for p- and n-type devices were obtained. Application of these devices for microwave ICs and subnanosecond switching networks are described.

Keywords

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