An analysis of equivalent circuit with gate protection in MOS devices
- 1 April 1978
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 25 (4) , 491-492
- https://doi.org/10.1109/t-ed.1978.19112
Abstract
The dependence of the resistance associated with the equivalent circuit with gate protection on the electrical breakdown voltage was analyzed in terms of the transient solution of the equivalent circuit. The series resistance for the input voltage and the dynamic resistance in the breakdown region of the protective diode are found to have pronounced effects on the electrical breakdown voltage of the gate oxide, while the distributed resistance has a lesser effect on it.Keywords
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