A silicon integrated circuit force sensor
- 1 October 1969
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 16 (10) , 867-870
- https://doi.org/10.1109/t-ed.1969.16871
Abstract
A piezoresistive bridge and integrated circuit amplifier can be made in the same silicon cantilever. The purpose of the amplifier is to linearize as well as amplify the output.Keywords
This publication has 2 references indexed in Scilit:
- Piezoresistive Properties of Silicon Diffused LayersJournal of Applied Physics, 1963
- Semiconducting Stress Transducers Utilizing the Transverse and Shear Piezoresistance EffectsJournal of Applied Physics, 1961