Ion Implanted MOSFET's With Very Short Channel Lengths
- 1 January 2007
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Solid-State Circuits Society Newsletter
- Vol. 12 (1) , 36-37
- https://doi.org/10.1109/N-SSC.2007.4785542
Abstract
Ion implantation allows the fabrication of very small MOSFET switching devices with considerably thicker gate insulators. Capacitance from the source and drain to the substrate and to the gate is reduced by more than a factor of two compared to conventional structures. Conversely, for a given thickness, smaller devices can be achieved using ion implantation.Keywords
This publication has 2 references indexed in Scilit:
- Steady State Mathematical Theory for the Insulated Gate Field Effect TransistorIBM Journal of Research and Development, 1973
- Design of micron MOS switching devicesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1972